Name: IPD50R3K0CEBTMA1
Brand: Infineon Technologies
SKU: IPD50R3K0CEBTMA1
Availability: InStock

REF: IPD50R3K0CEBTMA1 Infineon Technologies

IPD50R3K0CEBTMA1

MOSFET N-CH 500V 1.7A TO252-3

IPD50R3K0CEBTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 1.7A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 7,502

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	13V
Rds On (Max) @ Id, Vgs	3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	84 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	18W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63