Name: IPD50R399CP
Brand: Infineon Technologies
SKU: IPD50R399CP
Availability: InStock

REF: IPD50R399CP Infineon Technologies

IPD50R399CP

MOSFET N-CH 550V 9A TO252-3

IPD50R399CP is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 550V 9A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

Datasheet Request a Quote

In Stock: 5,847

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	550 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63