IPD50R2K0CEAUMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPD50R2K0CEAUMA1 Infineon Technologies
IPD50R2K0CEAUMA1

Infineon Technologies

MOSFET N-CH 500V 2.4A TO252-3

IPD50R2K0CEAUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 500V 2.4A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 4,772

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs2Ohm @ 600mA, 13V
Vgs(th) (Max) @ Id3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds124 pF @ 100 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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