IPD50P03P4L11ATMA2

In Stock: 6,709
IPD50P03P4L11ATMA2 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPD50P03P4L11ATMA2 Infineon Technologies
IPD50P03P4L11ATMA2

Infineon Technologies

MOSFET P-CH 30V 50A TO252-31

IPD50P03P4L11ATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 30V 50A TO252-31. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 6,709

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds3770 pF @ 25 V
FET Feature-
Power Dissipation (Max)58W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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