Name: IPD30N06S4L23ATMA2
Brand: Infineon Technologies
SKU: IPD30N06S4L23ATMA2
Price: 1.09 USD
Availability: InStock

REF: IPD30N06S4L23ATMA2 Infineon Technologies

IPD30N06S4L23ATMA2

Infineon Technologies

MOSFET N-CH 60V 30A TO252-31

IPD30N06S4L23ATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 30A TO252-31. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

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In Stock: 1,854

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V

Vgs (Max)	±16V
Input Capacitance (Ciss) (Max) @ Vds	1560 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO252-3-11
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63