IPD06N03LB G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPD06N03LB G Infineon Technologies
IPD06N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A TO252-3

IPD06N03LB G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 30V 50A TO252-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-252-3, DPak (2 Leads + Tab), SC-63.

In Stock: 2,730

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2800 pF @ 15 V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3-11
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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