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IPC50N04S55R8ATMA1

In Stock: 4,104
IPC50N04S55R8ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPC50N04S55R8ATMA1 Infineon Technologies
IPC50N04S55R8ATMA1

Infineon Technologies

MOSFET N-CH 40V 50A 8TDSON-33

IPC50N04S55R8ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 40V 50A 8TDSON-33. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 4,104

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id3.4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1090 pF @ 25 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-33
Package / Case8-PowerTDFN

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