Name: IPC302N20NFDX1SA1
Brand: Infineon Technologies
SKU: IPC302N20NFDX1SA1
Availability: InStock

REF: IPC302N20NFDX1SA1 Infineon Technologies

IPC302N20NFDX1SA1

MOSFET N-CH 200V 1A SAWN ON FOIL

IPC302N20NFDX1SA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 200V 1A SAWN ON FOIL. Key specifications: mounting type Surface Mount, package / case Die.

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In Stock: 9,467

Specifications

17 parameters

Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	Sawn on foil
Package / Case	Die