Name: IPBE65R190CFD7AATMA1
Brand: Infineon Technologies
SKU: IPBE65R190CFD7AATMA1
Price: 6.49 USD
Availability: InStock

REF: IPBE65R190CFD7AATMA1 Infineon Technologies

IPBE65R190CFD7AATMA1

Infineon Technologies

MOSFET N-CH 650V 14A TO263-7

IPBE65R190CFD7AATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 14A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

Datasheet Request a Quote

In Stock: 992

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	190mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs	7 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1291 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	77W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-11
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA