Name: IPB60R199CPAATMA1
Brand: Infineon Technologies
SKU: IPB60R199CPAATMA1
Price: 2.83 USD
Availability: InStock

REF: IPB60R199CPAATMA1 Infineon Technologies

IPB60R199CPAATMA1

Infineon Technologies

MOSFET N-CH 600V 16A D2PAK

IPB60R199CPAATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 16A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -40°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 7,397

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1520 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	139W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB