Name: IPB60R105CFD7ATMA1
Brand: Infineon Technologies
SKU: IPB60R105CFD7ATMA1
Price: 4.17 USD
Availability: InStock

REF: IPB60R105CFD7ATMA1 Infineon Technologies

IPB60R105CFD7ATMA1

Infineon Technologies

MOSFET N-CH 650V 21A TO263-3-2

IPB60R105CFD7ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 21A TO263-3-2. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 1,202

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	105mOhm @ 9.3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 470µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1752 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	106W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB