Name: IPB530N15N3GATMA1
Brand: Infineon Technologies
SKU: IPB530N15N3GATMA1
Price: 2.17 USD
Availability: InStock

REF: IPB530N15N3GATMA1 Infineon Technologies

IPB530N15N3GATMA1

Infineon Technologies

MOSFET N-CH 150V 21A D2PAK

IPB530N15N3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 150V 21A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 1,950

Specifications

17 parameters

Product Status	Last Time Buy
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	53mOhm @ 18A, 10V
Vgs(th) (Max) @ Id	4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	887 pF @ 75 V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB