IPB320P10LMATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPB320P10LMATMA1 Infineon Technologies
IPB320P10LMATMA1

Infineon Technologies

TRENCH >=100V PG-TO263-3

IPB320P10LMATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TO263-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 3,456

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs32mOhm @ 54A, 10V
Vgs(th) (Max) @ Id2V @ 5.55mA
Gate Charge (Qg) (Max) @ Vgs219 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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