Name: IPB19DP10NMATMA1
Brand: Infineon Technologies
SKU: IPB19DP10NMATMA1
Price: 2.56 USD
Availability: InStock

REF: IPB19DP10NMATMA1 Infineon Technologies

IPB19DP10NMATMA1

Infineon Technologies

TRENCH >=100V PG-TO263-3

IPB19DP10NMATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. TRENCH >=100V PG-TO263-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 5,127

Specifications

17 parameters

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta), 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	185mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	4V @ 1.04mA
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 83W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB