IPB180P04P4L02ATMA2

In Stock: 6,618
IPB180P04P4L02ATMA2 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPB180P04P4L02ATMA2 Infineon Technologies
IPB180P04P4L02ATMA2

Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

IPB180P04P4L02ATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET P-CH 40V 180A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-7, D²Pak (6 Leads + Tab).

In Stock: 6,618

Specifications

17 parameters
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs286 nC @ 10 V
Vgs (Max)+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds18700 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-7-3
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

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