Name: IPB17N25S3100ATMA1
Brand: Infineon Technologies
SKU: IPB17N25S3100ATMA1
Price: 2.64 USD
Availability: InStock

REF: IPB17N25S3100ATMA1 Infineon Technologies

IPB17N25S3100ATMA1

Infineon Technologies

MOSFET N-CH 250V 17A TO263-3

IPB17N25S3100ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 250V 17A TO263-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 5,072

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 54µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1500 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	107W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB