Name: IPB120N10S405ATMA1
Brand: Infineon Technologies
SKU: IPB120N10S405ATMA1
Price: 2.85 USD
Availability: InStock

REF: IPB120N10S405ATMA1 Infineon Technologies

IPB120N10S405ATMA1

Infineon Technologies

MOSFET N-CH 100V 120A D2PAK

IPB120N10S405ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 120A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 1,248

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs	91 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6540 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	190W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB