Name: IPB120N06S4H1ATMA2
Brand: Infineon Technologies
SKU: IPB120N06S4H1ATMA2
Price: 4.99 USD
Availability: InStock

REF: IPB120N06S4H1ATMA2 Infineon Technologies

IPB120N06S4H1ATMA2

Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

IPB120N06S4H1ATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 120A TO263-3. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

Datasheet Request a Quote

In Stock: 6,222

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	270 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	21900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB