Name: IPB085N06L G
Brand: Infineon Technologies
SKU: IPB085N06L G
Availability: InStock

REF: IPB085N06L G Infineon Technologies

IPB085N06L G

MOSFET N-CH 60V 80A TO-263

IPB085N06L G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 80A TO-263. Key specifications: mounting type Surface Mount, package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 9,655

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	8.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2V @ 125µA
Gate Charge (Qg) (Max) @ Vgs	104 nC @ 10 V

Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	3500 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB