IPB070N06L G - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPB070N06L G Infineon Technologies
IPB070N06L G

Infineon Technologies

MOSFET N-CH 60V 80A D2PAK

IPB070N06L G is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 60V 80A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

In Stock: 3,335

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs126 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 30 V
FET Feature-
Power Dissipation (Max)214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO263-3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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