Name: IPB049NE7N3GATMA1
Brand: Infineon Technologies
SKU: IPB049NE7N3GATMA1
Price: 3.36 USD
Availability: InStock

REF: IPB049NE7N3GATMA1 Infineon Technologies

IPB049NE7N3GATMA1

Infineon Technologies

MOSFET N-CH 75V 80A D2PAK

IPB049NE7N3GATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 75V 80A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 8,688

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	75 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs	68 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4750 pF @ 37.5 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB