Name: IPB042N10N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB042N10N3GE8187ATMA1
Price: 2.40 USD
Availability: InStock

REF: IPB042N10N3GE8187ATMA1 Infineon Technologies

IPB042N10N3GE8187ATMA1

Infineon Technologies

MOSFET N-CH 100V 100A D2PAK

IPB042N10N3GE8187ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 100A D2PAK. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB.

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In Stock: 6,759

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	4.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	117 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8410 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB