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IPB039N10N3GE8197ATMA1

In Stock: 4,572
IPB039N10N3GE8197ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPB039N10N3GE8197ATMA1 Infineon Technologies
IPB039N10N3GE8197ATMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

IPB039N10N3GE8197ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. N-CHANNEL POWER MOSFET.

Datasheet Request a Quote

In Stock: 4,572

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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