Name: IPB025N10N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB025N10N3GE8187ATMA1
Price: 4.24 USD
Availability: InStock

REF: IPB025N10N3GE8187ATMA1 Infineon Technologies

IPB025N10N3GE8187ATMA1

Infineon Technologies

MOSFET N-CH 100V 180A TO263-7

IPB025N10N3GE8187ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 180A TO263-7. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-7, D²Pak (6 Leads + Tab).

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In Stock: 7,516

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs	206 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	14800 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)