Name: IPAN65R650CEXKSA1
Brand: Infineon Technologies
SKU: IPAN65R650CEXKSA1
Price: 0.94 USD
Availability: InStock

REF: IPAN65R650CEXKSA1 Infineon Technologies

IPAN65R650CEXKSA1

Infineon Technologies

MOSFET N-CH 650V 10.1A TO220

IPAN65R650CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 10.1A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 1,618

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	10.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 100 V
FET Feature	Super Junction
Power Dissipation (Max)	28W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack