Name: IPAN60R360P7SXKSA1
Brand: Infineon Technologies
SKU: IPAN60R360P7SXKSA1
Price: 1.60 USD
Availability: InStock

REF: IPAN60R360P7SXKSA1 Infineon Technologies

IPAN60R360P7SXKSA1

Infineon Technologies

MOSFET N-CH 650V 9A TO220

IPAN60R360P7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 9A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

Datasheet Request a Quote

In Stock: 8,977

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	555 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	22W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220 Full Pack
Package / Case	TO-220-3 Full Pack