Name: IPAN60R125PFD7SXKSA1
Brand: Infineon Technologies
SKU: IPAN60R125PFD7SXKSA1
Price: 3.29 USD
Availability: InStock

REF: IPAN60R125PFD7SXKSA1 Infineon Technologies

IPAN60R125PFD7SXKSA1

Infineon Technologies

MOSFET N-CH 650V 25A TO220

IPAN60R125PFD7SXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 25A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

Request a Quote

In Stock: 5,303

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	125mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id	4.5V @ 390µA
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1503 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack