IPA90R800C3 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPA90R800C3 Infineon Technologies
IPA90R800C3

Infineon Technologies

MOSFET N-CH 900V 6.9A TO220

IPA90R800C3 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 900V 6.9A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 6,567

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs800mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 100 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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