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IPA80R600P7XKSA1

In Stock: 1,423
IPA80R600P7XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPA80R600P7XKSA1 Infineon Technologies
IPA80R600P7XKSA1

Infineon Technologies

MOSFET N-CHANNEL 800V 8A TO220

IPA80R600P7XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CHANNEL 800V 8A TO220. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 1,423

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 500 V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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