Name: IPA80R1K4P7
Brand: Infineon Technologies
SKU: IPA80R1K4P7
Availability: InStock

REF: IPA80R1K4P7 Infineon Technologies

IPA80R1K4P7

POWER FIELD-EFFECT TRANSISTOR

IPA80R1K4P7 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. POWER FIELD-EFFECT TRANSISTOR. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 5,382

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id	3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs	10 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 500 V
FET Feature	-
Power Dissipation (Max)	24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-31 Full Pack
Package / Case	TO-220-3 Full Pack