IPA80R1K4CEXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPA80R1K4CEXKSA1 Infineon Technologies
IPA80R1K4CEXKSA1

Infineon Technologies

MOSFET N-CH 800V 2.8A TO220

IPA80R1K4CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 800V 2.8A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 734

Specifications

17 parameters
Product StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-FP
Package / CaseTO-220-3 Full Pack

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