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IPA65R650CEXKSA1

In Stock: 8,361
IPA65R650CEXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPA65R650CEXKSA1 Infineon Technologies
IPA65R650CEXKSA1

Infineon Technologies

MOSFET N-CH 650V 7A TO220

IPA65R650CEXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 650V 7A TO220. Key specifications: mounting type Through Hole, operating temperature -40°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

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In Stock: 8,361

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs650mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 100 V
FET Feature-
Power Dissipation (Max)28W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-FP
Package / CaseTO-220-3 Full Pack

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