Name: IPA60R099C6XKSA1
Brand: Infineon Technologies
SKU: IPA60R099C6XKSA1
Price: 8.14 USD
Availability: InStock

REF: IPA60R099C6XKSA1 Infineon Technologies

IPA60R099C6XKSA1

Infineon Technologies

MOSFET N-CH 600V 37.9A TO220-FP

IPA60R099C6XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 37.9A TO220-FP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 150°C (TJ), package / case TO-220-3 Full Pack.

Datasheet Request a Quote

In Stock: 13,683

Specifications

17 parameters

Product Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	37.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs	119 nC @ 10 V

Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2660 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-FP
Package / Case	TO-220-3 Full Pack