IPA126N10N3GXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IPA126N10N3GXKSA1 Infineon Technologies
IPA126N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 35A TO220-FP

IPA126N10N3GXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 35A TO220-FP. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-220-3 Full Pack.

In Stock: 488

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs12.6mOhm @ 35A, 10V
Vgs(th) (Max) @ Id3.5V @ 45µA
Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220 Full Pack
Package / CaseTO-220-3 Full Pack

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