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IMZA65R083M1HXKSA1

In Stock: 172
IMZA65R083M1HXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IMZA65R083M1HXKSA1 Infineon Technologies
IMZA65R083M1HXKSA1

Infineon Technologies

SILICON CARBIDE MOSFET, PG-TO247

IMZA65R083M1HXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SILICON CARBIDE MOSFET, PG-TO247. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

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In Stock: 172

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs111mOhm @ 11.2A, 18V
Vgs(th) (Max) @ Id5.7V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 18 V
Vgs (Max)+20V, -2V
Input Capacitance (Ciss) (Max) @ Vds624 pF @ 400 V
FET Feature-
Power Dissipation (Max)104W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-3
Package / CaseTO-247-4

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