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IMZ120R220M1HXKSA1

In Stock: 465
IMZ120R220M1HXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IMZ120R220M1HXKSA1 Infineon Technologies
IMZ120R220M1HXKSA1

Infineon Technologies

SICFET N-CH 1.2KV 13A TO247-4

IMZ120R220M1HXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SICFET N-CH 1.2KV 13A TO247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

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In Stock: 465

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs220mOhm @ 4A, 18V
Vgs(th) (Max) @ Id5.7V @ 1.6mA
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 18 V
Vgs (Max)+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds289 pF @ 800 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-1
Package / CaseTO-247-4

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