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IMZ120R045M1XKSA1

In Stock: 9,478
IMZ120R045M1XKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IMZ120R045M1XKSA1 Infineon Technologies
IMZ120R045M1XKSA1

Infineon Technologies

SICFET N-CH 1200V 52A TO247-4

IMZ120R045M1XKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SICFET N-CH 1200V 52A TO247-4. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-4.

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In Stock: 9,478

Specifications

17 parameters
Product StatusNot For New Designs
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs52 nC @ 15 V
Vgs (Max)+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 800 V
FET FeatureCurrent Sensing
Power Dissipation (Max)228W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-4-1
Package / CaseTO-247-4

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