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IMW120R020M1HXKSA1

In Stock: 5,720
IMW120R020M1HXKSA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IMW120R020M1HXKSA1 Infineon Technologies
IMW120R020M1HXKSA1

Infineon Technologies

SIC DISCRETE

IMW120R020M1HXKSA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SIC DISCRETE. Key specifications: mounting type Through Hole, operating temperature -55°C ~ 175°C (TJ), package / case TO-247-3.

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In Stock: 5,720

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C98A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs26.9mOhm @ 41A, 18V
Vgs(th) (Max) @ Id5.2V @ 17.6mA
Gate Charge (Qg) (Max) @ Vgs83 nC @ 18 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds3460 nF @ 25 V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3
Package / CaseTO-247-3

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