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IMBG65R072M1HXTMA1

In Stock: 4,780
IMBG65R072M1HXTMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IMBG65R072M1HXTMA1 Infineon Technologies
IMBG65R072M1HXTMA1

Infineon Technologies

SILICON CARBIDE MOSFET PG-TO263-

IMBG65R072M1HXTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SILICON CARBIDE MOSFET PG-TO263-.

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In Stock: 4,780

Specifications

17 parameters
Product StatusActive
FET Type-
Technology-
Drain to Source Voltage (Vdss)-
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting Type-
Supplier Device Package-
Package / Case-

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Manufacturers in Transistors - FETs, MOSFETs - Single

Torex Semiconductor Ltd NXP USA Inc. Taiwan Semiconductor Corporation Nexperia USA Inc. Panjit International Inc. Toshiba Semiconductor and Storage Vishay Siliconix IXYS Diotec Semiconductor Rectron USA Alpha & Omega Semiconductor Inc. Yangzhou Yangjie Electronic Technology Co.,Ltd

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