Name: IMBG120R030M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG120R030M1HXTMA1
Price: 25.45 USD
Availability: InStock

REF: IMBG120R030M1HXTMA1 Infineon Technologies

IMBG120R030M1HXTMA1

Infineon Technologies

SICFET N-CH 1.2KV 56A TO263

IMBG120R030M1HXTMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. SICFET N-CH 1.2KV 56A TO263. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA.

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In Stock: 7,102

Specifications

17 parameters

Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	41mOhm @ 25A, 18V
Vgs(th) (Max) @ Id	5.7V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 18 V

Vgs (Max)	+18V, -15V
Input Capacitance (Ciss) (Max) @ Vds	2290 pF @ 800 V
FET Feature	Standard
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-12
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA