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IGT60R070D1E8220ATMA1

In Stock: 6,827
IGT60R070D1E8220ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IGT60R070D1E8220ATMA1 Infineon Technologies
IGT60R070D1E8220ATMA1

Infineon Technologies

GAN HV

IGT60R070D1E8220ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GAN HV. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 6,827

Specifications

17 parameters
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-3
Package / Case8-PowerSFN

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