Name: IGT60R070D1ATMA1
Brand: Infineon Technologies
SKU: IGT60R070D1ATMA1
Availability: InStock

REF: IGT60R070D1ATMA1 Infineon Technologies

IGT60R070D1ATMA1

GANFET N-CH 600V 31A 8HSOF

IGT60R070D1ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GANFET N-CH 600V 31A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 1,650

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN