Name: IGT40R070D1E8220ATMA1
Brand: Infineon Technologies
SKU: IGT40R070D1E8220ATMA1
Availability: InStock

REF: IGT40R070D1E8220ATMA1 Infineon Technologies

IGT40R070D1E8220ATMA1

Infineon Technologies

MOSFET N-CH 400V 31A HSOF-8-3

IGT40R070D1E8220ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 400V 31A HSOF-8-3. Key specifications: mounting type Surface Mount, operating temperature 0°C ~ 150°C (TJ), package / case 8-PowerSFN.

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In Stock: 5,148

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	382 pF @ 320 V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	0°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-3
Package / Case	8-PowerSFN