Name: IGLD60R190D1AUMA1
Brand: Infineon Technologies
SKU: IGLD60R190D1AUMA1
Availability: InStock

REF: IGLD60R190D1AUMA1 Infineon Technologies

IGLD60R190D1AUMA1

MOSFET N-CH 600V 10A LSON-8

IGLD60R190D1AUMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 600V 10A LSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-LDFN Exposed Pad.

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In Stock: 8,597

Specifications

17 parameters

Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs	-

Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	157 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	62.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-LSON-8-1
Package / Case	8-LDFN Exposed Pad