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IGLD60R070D1AUMA3

In Stock: 8,920
IGLD60R070D1AUMA3 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IGLD60R070D1AUMA3 Infineon Technologies
IGLD60R070D1AUMA3

Infineon Technologies

GANFET N-CH

IGLD60R070D1AUMA3 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. GANFET N-CH. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 150°C (TJ), package / case 8-LDFN Exposed Pad.

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In Stock: 8,920

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-LSON-8-1
Package / Case8-LDFN Exposed Pad

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