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IGB03N120H2ATMA1616

In Stock: 7,143
IGB03N120H2ATMA1616 - Infineon Technologies - Transistors - Bipolar (BJT) - Single
REF: IGB03N120H2ATMA1616 Infineon Technologies
IGB03N120H2ATMA1616

Infineon Technologies

POWER BIPOLAR TRANSISTOR

IGB03N120H2ATMA1616 is a Transistors - Bipolar (BJT) - Single manufactured by Infineon Technologies. POWER BIPOLAR TRANSISTOR.

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In Stock: 7,143

Specifications

13 parameters
Product StatusActive
Transistor Type-
Current - Collector (Ic) (Max)-
Voltage - Collector Emitter Breakdown (Max)-
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max-
Frequency - Transition-
Operating Temperature-
Mounting Type-
Package / Case-
Supplier Device Package-

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