IFS100B12N3E4B31BOSA1

In Stock: 14
IFS100B12N3E4B31BOSA1 - Infineon Technologies - Transistors - IGBTs - Modules
REF: IFS100B12N3E4B31BOSA1 Infineon Technologies
IFS100B12N3E4B31BOSA1

Infineon Technologies

IGBT MOD 1200V 200A 515W

IFS100B12N3E4B31BOSA1 is a Transistors - IGBTs - Modules manufactured by Infineon Technologies. IGBT MOD 1200V 200A 515W. Key specifications: mounting type Chassis Mount, operating temperature -40°C ~ 150°C, package / case Module, current - collector (ic) (max) 200 A.

In Stock: 14

Specifications

15 parameters
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationFull Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)200 A
Power - Max515 W
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 100A
Current - Collector Cutoff (Max)1 mA
Input Capacitance (Cies) @ Vce6.3 nF @ 25 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageModule

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