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IAUZ30N08S5N186ATMA1

In Stock: 6,312
IAUZ30N08S5N186ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IAUZ30N08S5N186ATMA1 Infineon Technologies
IAUZ30N08S5N186ATMA1

Infineon Technologies

MOSFET_(75V 120V( PG-TSDSON-8

IAUZ30N08S5N186ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET_(75V 120V( PG-TSDSON-8. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 6,312

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C30A (Tj)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id3.8V @ 13µA
Gate Charge (Qg) (Max) @ Vgs12.1 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds759 pF @ 40 V
FET Feature-
Power Dissipation (Max)41W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-32
Package / Case8-PowerTDFN

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