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IAUZ18N10S5L420ATMA1

In Stock: 7,124
IAUZ18N10S5L420ATMA1 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IAUZ18N10S5L420ATMA1 Infineon Technologies
IAUZ18N10S5L420ATMA1

Infineon Technologies

MOSFET N-CH 100V 18A TSDSON-8-32

IAUZ18N10S5L420ATMA1 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 100V 18A TSDSON-8-32. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerTDFN.

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In Stock: 7,124

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs42mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 50 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8-32
Package / Case8-PowerTDFN

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