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IAUT165N08S5N029ATMA2

In Stock: 8,823
IAUT165N08S5N029ATMA2 - Infineon Technologies - Transistors - FETs, MOSFETs - Single
REF: IAUT165N08S5N029ATMA2 Infineon Technologies
IAUT165N08S5N029ATMA2

Infineon Technologies

MOSFET N-CH 80V 165A 8HSOF

IAUT165N08S5N029ATMA2 is a Transistors - FETs, MOSFETs - Single manufactured by Infineon Technologies. MOSFET N-CH 80V 165A 8HSOF. Key specifications: mounting type Surface Mount, operating temperature -55°C ~ 175°C (TJ), package / case 8-PowerSFN.

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In Stock: 8,823

Specifications

17 parameters
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6370 pF @ 40 V
FET Feature-
Power Dissipation (Max)167W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-1
Package / Case8-PowerSFN

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